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tsm 3n80 800v n-channel power mosfet 1/12 version: c13 to - 220 ito - 220 product summary v ds (v) r ds(on) (?) i d (a) 800 4.2 @ v gs =10v 1.5 general description the tsm3n80 n-channel power mosfet is produced by new advance planar process. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. to - 251 (ipak) to - 252 (dpak) features low r ds(on) 3.3? (typ.) low gate charge typical @ 19nc (typ.) low crss typical @ 10.2pf (typ.) improved dv/dt capability ordering information part no. package packing tsm3n80ch c5g to-251 75pcs / tube tsm3n80cp rog to-252 2.5kpcs / 13 reel tsm3n80cz c0 to-220 50pcs / tube tsm3n80ci c0 ito-220 50pcs / tube note: g denotes for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit ipak/dpak ito-220 to-220 drain-source voltage v ds 800 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 3 a tc = 100oc 1.83 a pulsed drain current * i dm 12 a single pulse avalanche energy (note 2) e as 48 mj avalanche current (repetitive) (note 1) i ar 3 a repetitive avalanche energy (note 1) e ar 9.4 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns total power dissipation @ t c = 25 o c p tot 94 32 94 w operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c note: limited by maximum junction temperature pin definition : 1. gate 2. drain 3. source block diagram n-channel mosfet
tsm 3n80 800v n-channel power mosfet 2/12 version: c13 thermal performance parameter symbol ipak/dpak ito-220 to-220 unit thermal resistance - junction to case r? jc 1.33 3.9 1.33 o c/w thermal resistance - junction to ambient r? ja 110 62.5 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 800 -- -- v drain-source on-state resistance v gs = 10v, i d = 1.5a r ds(on) -- 3.3 4.2 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 -- 4 v zero gate voltage drain current v ds = 800v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transfer conductance v ds = 30v, i d = 1.5a g fs -- 3.7 -- s dynamic total gate charge v ds = 640v, i d = 3a, v gs = 10v (note 4,5) q g -- 19 -- nc gate-source charge q gs -- 4 -- gate-drain charge q gd -- 7.6 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 696 -- pf output capacitance c oss -- 65 -- reverse transfer capacitance c rss -- 10.2 -- switching turn-on delay time v gs = 10v, i d = 3a, v dd = 400v, r g =25? (note 4,5) t d(on) -- 48 -- ns turn-on rise time t r -- 36 -- turn-off delay time t d(off) -- 106 -- turn-off fall time t f -- 41 -- source-drain diode ratings and characteristic source current integral reverse diode in the mosfet i s -- -- 3 a source current (pulse) i sm -- -- 12 a diode forward voltage i s = 3a, v gs = 0v v sd -- -- 1.5 v reverse recovery time v gs = 0v, i s =3a, di f /dt = 100a/us t fr -- 370 -- ns reverse recovery charge q fr -- 1.8 -- uc note 1: repetitive rating: pulse width limited by maximum junction temperature note 2: v dd = 50v, i as =3a, l=10mh, r g =25?, starting t j =25oc note 3: i sd 3a, di/dt200a/us, v dd bv dss , starting t j =25oc note 4: pulse test: pulse width 300us, duty cycle 2% note 5: essentially independent of operating temperature
tsm 3n80 800v n-channel power mosfet 3/12 version: c13 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform
tsm 3n80 800v n-channel power mosfet 4/12 version: c13 diode reverse recovery time test circuit & waveform
tsm 3n80 800v n-channel power mosfet 5/12 version: c13 electrical characteristics curve (tc = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 3n80 800v n-channel power mosfet 6/12 version: c13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) drain current vs. case temperature bv dss vs. junction temperature maximum safe operating area capacitance vs. drain-source voltage maximum safe operating area (ito-220)
tsm 3n80 800v n-channel power mosfet 7/12 version: c13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-ambient (ito-220)
tsm 3n80 800v n-channel power mosfet 8/12 version: c13 to-220 mechanical drawing to-220 dimension dim millimeters inches min max min max a 10.00 10.50 0.394 0.413 b 3.74 3.91 0.147 0.154 c 2.44 2.94 0.096 0.116 d -- 6.35 -- 0.250 e 0.38 1.10 0.015 0.043 f 2.34 2.71 0.092 0.107 g 4.69 5.43 0.185 0.214 h 12.70 14.73 0.500 0.580 j 8.38 9.38 0.330 0.369 k 14.22 16.51 0.560 0.650 l 3.55 4.82 0.140 0.190 m 1.16 1.40 0.046 0.055 n 27.70 29.62 1.091 1.166 o 2.03 2.92 0.080 0.115 p 0.25 0.61 0.010 0.024
tsm 3n80 800v n-channel power mosfet 9/12 version: c13 ito-220 mechanical drawing ito-220 dimension dim millimeters inches min max min max a 10.04 10.07 0.395 0.396 b 6.20 (typ.) 0.244 (typ.) c 2.20 (typ.) 0.087 (typ.) d 1.40 (typ.) 0.055 (typ.) e 15.0 15.20 0.591 0.598 f 0.52 0.54 0.020 0.021 g 2.35 2.73 0.093 0.107 h 13.50 13.55 0.531 0.533 i 1.11 1.49 0.044 0.058 j 2.60 2.80 0.102 0.110 k 4.49 4.50 0.176 0.177 l 1.15 (typ.) 0.045 (typ.) m 3.03 3.05 0.119 0.120 n 2.60 2.80 0.102 0.110 o 6.55 6.65 0.258 0.262
tsm 3n80 800v n-channel power mosfet 10/12 version: c13 to-251 mechanical drawing
tsm 3n80 800v n-channel power mosfet 11/12 version: c13 to-252 mechanical drawing unit: millimeters
tsm 3n80 800v n-channel power mosfet 12/12 version: c13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or i naccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this docu ment. except as provided in tscs terms and conditions of sale for such products, tsc assumes no liability whatsoever, a nd disclaims any express or implied warranty, relating to sale and/or use of tsc products including lia bility or warranties relating to fitness for a particul ar purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in med ical, life-saving, or life-sustaining applications. customers using or selling these products for use in such appl ications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.

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